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| STS01DTP06 Dual NPN-PNP complementary Bipolar transistor General features VCE(sat) 0.35V hFE >100 IC 1A High gain Low VCE(sat) Simplified circuit design Reduced component count SO-8 Applications Push-Pull or Totem-Pole configuration MOSFET and IGBT gate driving Motor, relay and solenoid driving Internal schematic diagram Description The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar techlogy. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver. Order codes Part Number STS01DTP06 Marking S01DTP06 Package SO-8 Packing Tape & reel March 2006 Rev 2 1/11 www.st.com 11 Contents STS01DTP06 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 2.2 Electrical characteristics (curve) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 2/11 STS01DTP06 1 Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter NPN Value PNP -60 -30 -5 -3 -6 -1 -2 2 1.6 -65 to 150 150 V V V A A A A W W C C Unit VCBO VCEO VEBO IC ICM IB IBM Ptot Ptot Tstg TJ Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current Collector peak current (tP < 5ms) Base current Base peak current (tP < 1ms) Total dissipation at T c = 25C single Total dissipation at T c = 25C couple Storage temperature Max. operating junction temperature 60 30 5 3 6 1 2 Table 2. Symbol Thermal data Parameter Value 62.5 78 Unit C/W C/W Rthj-amb 1 Thermal resistance junction-ambient____M__mMax (Single operation) Rthj-amb 1 Thermal resistance junction-ambient____M__mMax (Dual operation) 1 When mounted on 1 inch square pad of 2 oz. copper, t 10 sec. 3/11 Electrical characteristics STS01DTP06 2 Electrical characteristics (Tcase = 25C unless otherwise specified) Table 3. Symbol ICBO ICEO IEBO Q1-NPN transistor electrical characteristics Parameter Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test Conditions VCB = 60V VCE = 30V VEB = 5V Min. Typ. Max. 0.1 1 1 Unit A A A Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) VCE(sat) (1) VBE(sat) (1) hFE (1) Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain IC = 10mA IC = 1A IC = 2A IC = 1A IC = 1A IC = 3A IB = 10mA IB = 100mA IB = 10mA VCE = 2V VCE = 2V 30 0.35 1 0.7 1.1 V V V V 0.85 100 30 1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % (Tcase = 25C unless otherwise specified) Table 4. Symbol ICBO ICEO IEBO Q2-PNP transistor electrical characteristics Parameter Collector cut-off current (IE = 0) Collector cut-off current (IB = 0) Emitter cut-off current (IC = 0) Test Conditions VCB = -60V VCE = -30V VEB = -5V Min. Typ. Max. -0.1 -1 -1 Unit A A A Collector-emitter V(BR)CEO (1) breakdown voltage (IB = 0) VCE(sat) (1) Collector-emitter saturation voltage IC = -10mA IC = -1A IC = -2A IB = -10mA IB = -100mA -30 -0.35 -1 -0.7 V V V 4/11 STS01DTP06 Table 4. Symbol VBE(sat) (1) hFE (1) Q2-PNP transistor electrical characteristics Parameter Base-emitter saturation voltage DC current gain Test Conditions IC = -1A IC = -1A IC = -3A IB = -10mA VCE = -2V VCE = -2V 100 30 Min. Typ. -0.85 Max. -1.1 Unit V 1. Pulsed: Pulse duration = 300 ms, duty cycle 1.5 % 2.1 Electrical characteristics (curve) Figure 1. Reverse biased area Q1 NPN Figure 2. transistor DC current gain Q1 NPN transistor Figure 3. DC current gain Q1 NPN transistor Figure 4. Collector-emitter saturation voltage Q1 NPN transistor 5/11 Electrical characteristics Figure 5. Base-emitter saturation voltage Q1 NPN transistor Figure 6. STS01DTP06 Reverse biased area Q2 PNP transistor Figure 7. DC current gain Q2 PNP transistor Figure 8. DC current gain Q2 PNP transistor Figure 9. Collector-emitter saturation voltage Q2 PNP transistor Figure 10. Base-emitter saturation voltage Q2 PNP transistor 6/11 STS01DTP06 2.2 Test circuits Figure 11. Typical application 7/11 Package mechanical data STS01DTP06 3 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 8/11 STS01DTP06 SO-8 MECHANICAL DATA DIM. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm. MIN. TYP MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 9/11 Revision history STS01DTP06 4 Revision history Table 5. Date 22-Apr-2005 22-Mar-2006 30-Mar-2006 Revision history Revision 1 2 3 Initial release. New template The limit of current in figure number six has been modified from 6.5A to 6A. Changes 10/11 STS01DTP06 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2006 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 11/11 |
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